Patent · US Active

Semiconductor device including a vertical edge termination structure and method of manufacturing

US9570542B2 · kind B2 · utility

4Cited by

9References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alexander Breymesser · Villach, AT
Andre Brockmeier · Villach, AT
Elmar Falck · Hohenbrunn, DE
Francisco Javier Santos Rodriguez · Villach, AT
Holger Schulze · Villach, AT

Key dates

Filing date	Apr 1, 2014
Grant date	Feb 14, 2017
Priority date	—
Expiry date	Apr 1, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/256
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.