Semiconductor device and manufacturing method thereof
US9570556B1 · kind B1 · utility
14Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Mar 3, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The first fin structure and the second fin structure are both disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction in plan view. A first void is formed in the source/drain structure, and a second void is formed in the source/drain structure and located above the first void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.