Enhanced gate dielectric for a field effect device with a trenched gate
US9570570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2013 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jul 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a silicon carbide (SiC) field effect device that has a gate assembly formed in a trench. The gate assembly includes a gate dielectric that is an dielectric layer, which is deposited along the inside surface of the trench and a gate dielectric formed over the gate dielectric. The trench extends into the body of the device from a top surface and has a bottom and side walls that extend from the top surface of the body to the bottom of the trench. The thickness of the dielectric layer on the bottom of the trench is approximately equal to or greater than the thickness of the dielectric layer on the side walls of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.