Method of forming a metal chalcogenide material and methods of forming memory cells including same
US9573809B2 · kind B2 · utility
2Cited by
9References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | May 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of forming a metal chalcogenide material. The method comprises exposing a metal to a solution comprising a chalcogenide element source compound and an acid. Methods of forming memory cells including the metal chalcogenide material are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.