Method and apparatus for forming thin film
US9574269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Mar 24, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus of forming a thin film using an organic metal compound gas and oxidizing agents are disclosed. The method includes performing a first film formation process of forming a thin film on an object to be processed using an organic metal compound gas and a first oxidizing agent; performing an annealing process of supplying a second oxidizing agent having stronger oxidizing power than the first oxidizing agent into the reaction chamber while an interior of the reaction chamber is heated to a predetermined temperature; and performing a second film formation process of forming a thin film on the thin film formed in the first thin film formation process using the organic metal compound gas and the second oxidizing agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.