Memory cells including vertically oriented adjustable resistance structures
US9576657B1 · kind B1 · utility
6Cited by
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24Claims
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Key dates
| Filing date | Sep 29, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Sep 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell is provided that includes a vertically-oriented adjustable resistance structure including a control terminal coupled to a word line, and a reversible resistance-switching element coupled in series with and disposed above or below the vertically-oriented adjustable resistance structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.