Systems, and devices, and methods for programming a resistive memory cell
US9576658B2 · kind B2 · utility
2Cited by
17References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 25, 2016 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Feb 25, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions. The memory cell may have more than two possible programmed states, where each programmed state of the memory cell includes a different fraction of amorphous material. A memory element may be melted and then quenched. The fraction of amorphous material, and thus the programmed state, may be controlled by selecting one of multiple quenching periods for the programming pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.