Process for etching metal using a combination of plasma and solid state sources
US9576810B2 · kind B2 · utility
36Cited by
10References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 29, 2014 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | May 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.