Pattern decomposition for directed self assembly patterns templated by sidewall image transfer
US9576817B1 · kind B1 · utility
26Cited by
5References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 3, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Dec 3, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.