Patent · US Active

Etching chamber with subchamber

US9576824B2 · kind B2 · utility

0Cited by

12References

14Claims

0Family size

Assignee

SPTS Technologies Limited · GB

Inventors

Kyle S. Lebouitz · Pittsburgh, US
Edward F. Hinds · Berwick-upon-Tweed, GB

Key dates

Filing date	Feb 22, 2006
Grant date	Feb 21, 2017
Priority date	—
Expiry date	Aug 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/67751
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an apparatus for etching a semiconductor wafer or sample (101), the semiconductor wafer or sample is placed on a sample holder (104) disposed in a first chamber (103). The combination of the semiconductor wafer or sample and the sample holder is enclosed within a second chamber (130) inside the first chamber. Gas is evacuated from the second chamber and an etching gas is introduced into the second chamber, but not into the first chamber, to etch the semiconductor wafer or sample.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.