FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure
US9576980B1 · kind B1 · utility
19Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Aug 20, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Aug 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
FinFET devices are formed on the same semiconductor structure wherein at least one finFET device has a gate dielectric structure that is different in thickness relative to a gate dielectric structure of at least one other finFET device. The finFET devices are formed as part of the same fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.