Metal-insulator-metal capacitor structure and method for manufacturing the same
US9577029B2 · kind B2 · utility
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Key dates
| Filing date | Nov 21, 2014 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Nov 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A metal-insulator-metal (MIM) capacitor structure and a method for manufacturing the same. The method includes a step hereinafter. A 5-layered dual-dielectric structure is provided on a substrate. The 5-layered dual-dielectric structure includes a bottom metal layer, a first dielectric layer, an intermediate metal layer, a second dielectric layer and a top metal layer in order. The first dielectric layer and the second dielectric layer have different thicknesses.
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