Method for fabricating a transistor device with a tuned dopant profile
US9577041B2 · kind B2 · utility
2Cited by
410References
4Claims
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Key dates
| Filing date | Feb 25, 2016 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Feb 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor device with a tuned dopant profile is fabricated by implanting one or more dopant migrating mitigating material such as carbon. The process conditions for the carbon implant are selected to achieve a desired peak location and height of the dopant profile for each dopant implant, such as boron. Different transistor devices with similar boron implants may be fabricated with different peak locations and heights for their respective dopant profiles by tailoring the carbon implant energy to effect tuned dopant profiles for the boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.