Semiconductor structure with multilayer III-V heterostructures
US9577042B1 · kind B1 · utility
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9Claims
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Key dates
| Filing date | Aug 13, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Aug 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
Abstract
The source/drain of a fully III-V semiconductor or Si-based transistor includes a bottom barrier layer that may be lattice matched to the channel, a lower layer of a wide bandgap III-V material and a top layer of a comparatively narrow bandgap III-V material, with a compositionally graded layer between the lower layer and top layer gradually transitioning from the wide bandgap material to the narrow bandgap material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.