Methods of forming fins with different fin heights
US9577066B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes, among other things, forming first and second fins, forming a liner layer above at least a first upper surface of the first fin and a second upper surface of the second fin, and forming an ion-containing region in the first portion of the liner layer while not forming the ion-containing region in second portion of the liner layer. The method also includes performing a liner etching process so as to remove the second portion of the liner layer while leaving at least a portion of the first portion of the liner layer positioned above the first fin, and performing at least one etching process to define a reduced-height second fin that is less than an initial first height of the first fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.