Lowering tungsten resistivity by replacing titanium nitride with titanium silicon nitride
US9583349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Nov 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.