Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9583369B2 · kind B2 · utility
36Cited by
27References
11Claims
0Family size
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Key dates
| Filing date | Sep 23, 2013 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | May 22, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1393
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.