Solid state diffusion doping for bulk finFET devices

US9583489B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Brent A. Anderson · Jericho, US
• Hemanth Jagannathan · Niskayuna, US
• Sanjay C. Mehta · Niskayuna, US
• Balasubramanian Pranatharthiharan · Watervliet, US

Key dates

• Filing date: Jan 8, 2016
• Grant date: Feb 28, 2017
• Expiry date: Jan 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

A method of forming a semiconductor device comprises forming a first fin on a substrate, depositing an insulator layer on the substrate adjacent to the first fin, removing a first portion of the insulator layer to expose a first portion of a sidewall of the first fin, depositing a layer of spacer material over the first portion of the sidewall of the first fin, removing a second portion of the insulator layer to expose a second portion of the sidewall of the first fin, depositing a first glass layer including a first doping agent over the exposed second portion of the sidewall of the first fin, and performing a first annealing process to drive the first doping agent into the first fin.