Devices with embedded non-volatile memory and metal gates and methods for fabricating the same
US9583499B1 · kind B1 · utility
15Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Nov 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Devices and methods for fabricating devices with floating gates and replacement metal gates are provided. In an embodiment, a method for fabricating a device includes providing a semiconductor substrate. The method forms a floating gate and a sacrificial gate over the semiconductor substrate. Further, the method replaces the sacrificial gate with a metal gate. After replacing the sacrificial gate with the metal gate, the method forms a control gate over the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.