Asymmetric finFET memory access transistor

US9583624B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Chung H. Lam · Williston, US
• Chung-Hsun Lin · White Plains, US
• Darsen D. Lu · Mount Kisco, US
• Philip J. Oldiges · Lagrangeville, US

Key dates

• Filing date: Sep 25, 2015
• Grant date: Feb 28, 2017
• Expiry date: Sep 25, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/018
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A field effect transistor device comprises a semiconductor substrate, a doped source layer arranged on the semiconductor substrate, an insulator layer arranged on the doped source layer, a fin arranged on the insulator layer, a source region extension portion extending from the doped source layer and through the fin, a gate stack arranged over a channel region of the fin and adjacent to the source region extension portion, a drain region arranged on the fin adjacent to the gate stack; the drain region having a graduated doping concentration.