RRAM process with roughness tuning technology
US9583700B2 · kind B2 · utility
6Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Jun 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
The present invention relates to metal oxide based memory devices and methods for manufacturing such devices; and more particularly to memory devices having data storage materials based on metal oxide compounds fabricated with a roughness tuning process including an ion bombardment step of a bottom electrode surface prior to formation of a memory element on the bottom electrode surface. Ion bombardment improves the flatness of the bottom electrode which is beneficial in achieving a more uniform electrical field during operation, which improves device reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.