Focus metrology method and photolithography method and system
US9587929B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Jul 15, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Aug 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7026
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides a focus metrology method and photolithography method and system. The focus metrology method includes recognizing at least one relevant region and at least one irrelevant region on a workpiece surface, measuring a height of the relevant region and determining a focal length for an exposure process based on the measured height of the relevant region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.