Patent · US Active

Apparatus and method for efficient materials use during substrate processing

US9589769B2 · kind B2 · utility

0Cited by
2References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 20, 2014
Grant dateMar 7, 2017
Priority date
Expiry dateAug 20, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32623
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A processing apparatus may include a plasma chamber to house a plasma; and an extraction assembly disposed along a side of the plasma chamber. The extraction assembly may be configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate; and wherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.