Patent · US Active

In-situ etch rate determination for chamber clean endpoint

US9589773B2 · kind B2 · utility

1Cited by

6References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Sidharth Bhatia · Santa Cruz, US
Anjana M. Patel · San Jose, US
Abdul Aziz Khaja · San Jose, US

Key dates

Filing date	Apr 22, 2016
Grant date	Mar 7, 2017
Priority date	—
Expiry date	Apr 22, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/334
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.