Method of depositing ammonia free and chlorine free conformal silicon nitride film
US9589790B2 · kind B2 · utility
19Cited by
71References
21Claims
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Key dates
| Filing date | Nov 24, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Nov 24, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.