Method for depositing extremely low resistivity tungsten
US9589808B2 · kind B2 · utility
15Cited by
134References
14Claims
0Family size
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Key dates
| Filing date | Dec 19, 2013 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Dec 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.