Integrated circuit structure with metal crack stop and methods of forming same
US9589911B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Aug 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide an integrated circuit (IC) structure with a metal crack stop and methods of forming the same. An IC structure according to embodiments of the present disclosure can include an insulator positioned over a substrate; a barrier film positioned over the insulator; an interlayer dielectric positioned over the barrier film; and a metal crack stop positioned over the substrate and laterally adjacent to each of the insulator, the barrier film, and the interlayer dielectric, wherein the metal crack stop includes a sidewall having a first recess therein, and wherein a horizontal interface between the barrier film and the interlayer dielectric intersects the sidewall of the metal crack stop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.