Integrated circuit structure with crack stop and method of forming same
US9589912B1 · kind B1 · utility
5Cited by
35References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Aug 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first aspect of the disclosure provides for an integrated circuit structure. The integrated circuit structure may comprise a first metal structure in a first dielectric layer on a substrate in a crack stop area; and a first crack stop structure in a second dielectric layer, the first crack stop structure being over the first metal structure and including: a first metal fill contacting the first metal structure; and an air seam substantially separating the first metal fill and the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.