Patent · US Active

3D integration of fanout wafer level packages

US9589936B2 · kind B2 · utility

18Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 10, 2015
Grant dateMar 7, 2017
Priority date
Expiry dateMar 19, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19105
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Fanout wafer level packages (FOWLPs) and methods of formation are described. In an embodiment, a package includes a first routing layer, a first die on a top side of the first routing layer, and a first molding compound encapsulating the first die on the first routing layer. A first plurality of conductive pillars extends from a bottom side of the first routing layer. A second die is on a top side of a second routing layer, and the first plurality of conductive pillars is on the top side of the routing layer. A second molding compound encapsulates the first molding compound, the first routing layer, the first plurality of conductive pillars, and the second die on the second routing layer. In an embodiment, a plurality of conductive bumps (e.g. solder balls) extends from a bottom side of the second routing layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.