Static random access memory

US9589966B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Chih-Kai Hsu · Tainan, TW
• Chao-Hung Lin · 埔鹽鄉, TW
• Yu-Hsiang Hung · Tainan, TW
• Ssu-I Fu
• Jyh-Shyang Jenq · Chunri, TW

Key dates

• Filing date: May 28, 2015
• Grant date: Mar 7, 2017
• Expiry date: Jun 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A static random access memory (SRAM) is disclosed. The SRAM includes a plurality of SRAM cells on a substrate, in which each of the SRAM cells comprises: a gate structure on the substrate; a first interlayer dielectric (ILD) layer around the gate structure; a first contact plug in the first ILD layer; a second ILD layer on the first ILD layer; and a second contact plug in the second ILD layer and electrically connected to the first contact plug.