Device switching using layered device structure
US9590013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Oct 8, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/51
- WIPO fieldDigital communication
- WIPO sectorElectrical engineering
Abstract
A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a specific embodiment, the device includes a buffer material disposed between the first electrode and the switching material. The buffer material provides a blocking region between the switching material and the first electrode so that the blocking region is substantially free from metal particles from the second metal material when a first voltage is applied to the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.