Patent · US Active

Monocrystalline SiC substrate with a non-homogeneous lattice plane course

US9590046B2 · kind B2 · utility

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5References

7Claims

0Family size

Assignee

SiCrystal GMBH · DE

Inventors

Thomas Straubinger · Steinfeld (Oldenburg), DE
Michael Vogel · Nuremberg, DE
Andreas Wohlfart · Erlangen, DE

Key dates

Filing date	Apr 22, 2014
Grant date	Mar 7, 2017
Priority date	—
Expiry date	Apr 7, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/219
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.