Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers

US9590056B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Kai Frohberg · Meißen, DE
• Marco Lepper · Dresden, DE
• Katrin Reiche · Goltzscha, DE

Key dates

• Filing date: Dec 14, 2015
• Grant date: Mar 7, 2017
• Expiry date: Dec 14, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a silicide contact region positioned at least partially in a semiconductor layer, an etch stop layer positioned above the semiconductor layer, and a dielectric layer positioned above the etch stop layer. A contact structure that includes a conductive contact material extends through at least a portion of the dielectric layer and through an entirety of the etch stop layer to the silicide contact region, and a silicide protection layer is positioned between sidewalls of the etch stop layer and sidewalls of the contact structure.