Patent · US Active

Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structure

US9590118B1 · kind B1 · utility

8Cited by

3References

15Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Elliot John Smith · Dresden, DE
Sven Beyer · Dresden, DE
Nigel Chan · Sunnyvale, US
Jan Hoentschel · Dresden, DE

Key dates

Filing date	Sep 14, 2015
Grant date	Mar 7, 2017
Priority date	—
Expiry date	Sep 14, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure provides, in a first aspect, a semiconductor device structure, including an SOI substrate comprising a semiconductor base substrate, a buried insulating structure formed on the semiconductor base substrate and a semiconductor film formed on the buried insulating structure, wherein the buried insulating structure comprises a multilayer stack having a nitride layer interposed between two oxide layers. The semiconductor device structure further includes a semiconductor device formed in and above an active region of the SOI substrate, and a back bias contact which is electrically connected to the semiconductor base substrate below the semiconductor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.