Methods and apparatus for stable substrate processing with multiple RF power supplies
US9593410B2 · kind B2 · utility
1Cited by
1References
18Claims
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Key dates
| Filing date | Mar 5, 2013 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Oct 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3476
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.