Alkyl push flow for vertical flow rotating disk reactors

US9593434B2 · kind B2 · utility

Assignee

• Veeco Instruments Inc. · US

Inventors

• Michael Murphy · Sour Lake, US
• Richard A. Hoffman · Landenberg, US
• Jonathan Cruel · Plano, US
• Lev Kadinski · Burghausen, DE
• Jeffrey C. Ramer · Flemington, US
• Eric A. Armour · Pennington, US

Key dates

• Filing date: Apr 17, 2014
• Grant date: Mar 14, 2017
• Expiry date: Nov 11, 2034

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/165
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.