Defect classification using topographical attributes
US9595091B2 · kind B2 · utility
7Cited by
27References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2012 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Apr 19, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for classification includes receiving an image of an area of a semiconductor wafer on which a pattern has been formed, the area containing a location of interest. At least one value for one or more attributes of the location of interest are computed based upon topographical features of the location of interest in a three-dimensional (3D) map of the area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.