Highly selective etching methods for etching dielectric materials
US9595451B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Oct 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming high aspect ratio features using an etch process are provided. In one embodiment, a method for etching a dielectric layer to form features in the dielectric layer includes (a) supplying an etching gas mixture during a first mode to etch a portion of a dielectric layer disposed on a substrate while forming a passivation protection in the dielectric layer, wherein the dielectric layer is etched through openings defined in a patterned mask layer disposed on the dielectric layer, (b) supplying an etching gas mixture during a second mode to continue forming the passivation protection in the dielectric layer without etching the dielectric layer, and repeatedly performing (a) and (b) to form features in the dielectric layer until a surface of the substrate is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.