Methods and apparatus for cleaning semiconductor wafers

US9595457B2 · kind B2 · utility

Assignee

• ACM RESEARCH (SHANGHAI), INC. · CN

Inventors

• Jian Wang · Rosharon, US
• Sunny Voha Nuch · Shanghai, CN
• Liangzhi Xie · Shanghai, CN
• Junping Wu · Shanghai, CN
• Zhaowei Jia · Shanghai, CN
• Yunwen Huang · Shanghai, CN
• Zhifeng Gao · Shanghai, CN
• Hui Wang · Shanghai, CN

Key dates

• Filing date: Dec 12, 2008
• Grant date: Mar 14, 2017
• Expiry date: Aug 24, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/6708
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.