Patent · US Active

Semiconductor device and method for producing the same

US9595469B2 · kind B2 · utility

2Cited by

2References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jochen Hilsenbeck · Villach, AT
Jens Peter Konrath · Villach, AT
Stefan Krivec · Villach, AT

Key dates

Filing date	Nov 4, 2013
Grant date	Mar 14, 2017
Priority date	—
Expiry date	May 31, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, including amorphous molybdenum nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.