Pixel isolation regions formed with conductive layers
US9595555B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | May 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor may include isolation regions that are formed in between photodiodes. These isolation regions may prevent cross-talk and improve the performance of the image sensor. The isolation regions may include a conductive layer that is electrically connected to a bias voltage supply line. Biasing the conductive layer may result in a charge inversion in the substrate adjacent to the conductive layer. The charge inversion may prevent the generation of dark current. The conductive layer may be formed on a liner oxide layer in trenches formed in epitaxial silicon. A connecting layer may be used to electrically connect each conductive layer. The connecting layer may be formed integrally with the conductive layer or formed from a separate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.