Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
US9595576B2 · kind B2 · utility
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24References
18Claims
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Key dates
| Filing date | Oct 14, 2014 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Oct 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.