Patent · US Active

Ion sensor

US9599586B2 · kind B2 · utility

0Cited by

8References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stefan Krivec · Villach, AT
Guenter Schagerl · Finkenstein, AT

Key dates

Filing date	Aug 27, 2012
Grant date	Mar 21, 2017
Priority date	—
Expiry date	Feb 12, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/62
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The disclosure describes techniques for determining an ion concentration in a sample. According to these techniques of this disclosure, an ion concentration of a sample is determined based on detecting at least one change in an electrical characteristic of a semiconductor device due to a gate insulation layer of the semiconductor device placed in contact with the sample.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.