High power radio frequency (RF) in-line wafer testing
US9599657B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2013 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Jan 23, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/06772
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Approaches for performing in line wafer testing are provided. An approach includes a method that includes generating a radio frequency (RF) test signal, and applying the RF test signal to a device under test (DUT) in a wafer using a buckling beam probe set with a predefined pitch. The method also includes detecting an output RF signal from the DUT in response to the applying the RF test signal to the DUT, and sensing at least one frequency component of the detected output RF signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.