Non-intrusive measurement of a wafer DC self-bias in semiconductor processing equipment
US9601301B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | May 20, 2014 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.