Method of etching
US9601341B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2014 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Dec 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a feature in a substrate includes forming a mask structure over the substrate, the mask structure defining at least one re-entrant opening, etching the substrate through the opening to form the feature using a cyclic etch and deposition process, and removing the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.