Method of localized annealing of semi-conducting elements using a reflective area
US9601352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2015 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Sep 21, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making crystal semi-conducting material-based elements, including providing a support having amorphous semi-conducting material-based semi-conducting elements, the support being further provided with one or more components and with a reflective protective area configured so as to reflect a light radiation in a given wavelength range, exposing the element(s) to a laser radiation emitting in the given wavelength range so as to recrystallize the elements, the reflective protective area being arranged on the support relative to the elements and to the components so as to reflect the laser radiation and protect the components from this radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.