Patent · US Active

Semiconductor device and method of manufacturing a semiconductor device having a glass piece and a single-crystalline semiconductor portion

US9601376B2 · kind B2 · utility

1Cited by

7References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alexander Breymesser · Villach, AT
Andre Brockmeier · Villach, AT
Francisco Javier Santos Rodriguez · Villach, AT
Hans-Joachim Schulze · Taufkirchen, DE
Carsten von Koblinski · Velden am Wörther See, AT
Gerhard Schmidt · Graz, AT

Key dates

Filing date	Dec 7, 2015
Grant date	Mar 21, 2017
Priority date	—
Expiry date	Dec 7, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a glass piece and an active semiconductor element formed in a single-crystalline semiconductor portion. The single-crystalline semiconductor portion has a working surface, a rear side surface opposite to the working surface and an edge surface connecting the working and rear side surfaces. The glass piece has a portion extending along and in direct contact with the edge surface of the single-crystalline semiconductor portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.