FinFET fabrication by forming isolation trenches prior to fin formation
US9601383B1 · kind B1 · utility
2Cited by
0References
20Claims
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Assignee
Inventor
Key dates
| Filing date | Nov 16, 2015 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Nov 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure for a FinFET in fabrication is provided, the structure including a bulk semiconductor substrate initially with a hard mask over the substrate. Isolation trenches between regions of the structure where the fins will be are formed prior to the fins, and filled with selectively removable sacrificial isolation material. Remains of the hard mask are removed and another hard mask formed over the structure with filled isolation trenches. Fins are then formed throughout the structure, including the regions of sacrificial isolation material, which is thereafter selectively removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.