Device characterization by time dependent charging dynamics
US9601392B1 · kind B1 · utility
1Cited by
1References
13Claims
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Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Oct 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and device for characterizing a DC parameter of a SRAM device based on TDCD are provided. Embodiments include forming a SRAM test device, the SRAM test device having a top edge and a bottom edge and at least a first and a second S/D contact, a gate contact, and a channel region; inducing an inversion charge in the channel region through the gate contact; scanning the first S/D contact with an ebeam subsequent to inducing the inversion charge; and characterizing at least one DC parameter of the SRAM test device based on a dissipation of the inversion charge between the steps of inducing and scanning
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.